Universal Flash Storage (UFS) memory technology is one of the most widely used variants of flash-based storage in, among other things, phones, tablets, and portable game consoles. Now he Samsung first With a product based on the newly introduced version 4.0.
UFS 4.0 brings a number of improvements Compared to UFS 3.1, which was the previous version of the standard. As usual when it comes to storage, it’s performance that has increased, in this case doubling per path – from 11.6 Gbps to 23.2 Gbps.
According to Samsung, the company’s new storage can handle read speeds of up to 4200 MB/s and write speeds of up to 2800 MB/s. The fastest UFS 3.1 products have read speeds of up to 2,900 MB/s and write speeds of around 1200 MB/s, which means the latter is more than double the previous generation.
Samsung’s UFS 4.0 products are based on the company’s seventh generation V-NAND memory combined with a proprietary control circuit. They state that UFS 4.0 products have a sequential read speed of 6MB/s per milliampere, a measure of energy efficiency, which is a 46 percent improvement over previous products.
Currently, there are no circuits for phones or tablets that can take advantage of UFS 4.0, but it usually takes no more than a generation before support is implemented for new and faster standards. According to Samsung, the storage standard is expected not only in the next generation of flagship phones, but also in future AR and VR investments.
Samsung will offer UFS 4.0 modules with storage capacities of up to 1 TB. Mass production of the new UFS 4.0 circuits is scheduled to begin sometime during the third quarter of the year.
Have you ever felt that the storage speed of your phone is limited?
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